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【High-quality optoelectronic materials/high-purity 】>>>【Sputtering target】

Ultra High Purity Material Manufacturer

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86 13823152377

Product Description

Product Details

GeSbTe is a phase change storage material. Phase change memory (PCM) based on germanium antimony telluride shows significant commercialization potential. It is an alternative memory technology for NOR flash memory and some DRAM markets. Potential future new semiconductor memory chip technology.

Product performance

Composition	Ge,Sb,Te(Different atomic ratio)
Purity	99.99%
Density	>6.38g/cm³
Size	50.8mm - 440mm
Tolerance	Diameter：±0.1mm,Thickness：±0.1mm
Roughness	32RMS

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